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“JSTS has been indexed and abstracted in the SCIE (Science Citation Index Expanded) since Volume 9, Issue 1 in 2009. Furthermore, it continues to maintain its listing in the SCOPUS database and is recognized as a regular journal by the Korea Research Foundation.

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Title Surface Stoichiometry Dependence of Ambipolar SiGe Tunnel Field-effect Transistors and Its Effect on the Transient Performance Improvement
Authors (Minjeong Ryu) ; (Woo Young Choi)
DOI https://doi.org/10.5573/JSTS.2024.24.1.1
Page pp.1-7
ISSN 1598-1657
Keywords Silicon-germanium tunnel field-effect transistor; ambipolar behavior; complementary-like logic
Abstract The dependency of silicon-germanium (SiGe) tunnel field-effect transistors (TFETs) on surface stoichiometry is investigated in terms of ambipolar conduction behavior. According to the device simulation results, as the Ge mole fraction of SiGe TFETs increases, p-type TFETs show better performance improvement than n-type ones owing to the SiGe band alignment. Thus, pull-up hole current becomes stronger than pull-down electron one in the case of ambipolar SiGe TFET-based complementary-like logic circuits. The simulated inverters with 50-% Ge content exhibit ~82× lower pull-up and ~9× lower pull-down delays, respectively, than those with pure Si.