Volume 8, Number 3, September 2008 (ISSN 1598-1657)
     
     
       
      SPECIAL ISSUE ON CIRCUITS FOR WIRELESS AND WIRELINE COMMUNICATION        
 
 
      Announcement                                                                                                                                 Kukjin Chun   i    
      New Editorial Board Members                                                                                                                                 ii    
      Editorial                                                                                                                                  Deog-Kyoon Jeong   iii    
 
 
     
      A Multiphase Compensation Method with Dynamic Element Matching Technique in Σ-Δ Fractional-Ν Frequency Synthesizers
Zuow-Zun Chen and Tai-Cheng Lee
  179    
               
      A Combined Clock and Data Recovery Circuit with Adaptive Cancellation of Data-Dependent Jitte
Jin-Hee Lee, Suhwan Kim, and Deog-Kyoon Jeong
  193    
               
      A Continuously Tunable LC-VCO PLL with Bandwidth Linearization Techniques for PCI Express Gen2 Applications
Woogeun Rhee, Herschel Ainspan, Daniel J. Friedman, Todd Rasmus, Stacy Garvin, and Clay Cranford
  200    
               
      Surpassing Tradeoffs by Separation: Examples in Transmission Line Resonators, Phase-Locked Loops, and Analog-to-Digital Converters
Nan Sun, William F. Andress, Kyoungho Woo, and Donhee Ham
  210    
               
      An Analytical Modeling of Threshold Voltage and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for High Speed Wireless Communication
N. B. Balamurugan, K. Sankaranarayanan, P. Amutha, and M. Fathima John
  221    
               
 
 
    Design of a Latchup-Free ESD Power Clamp for Smart Power ICs
Jae-Young Park, Dong-Jun Kim, and Sang-Gyu Park
  227    
             
    Enhanced fT and fMAX SiGe BiCMOS Process and Wideband Power Efficient Medium Power Amplifier
Hyun-Cheol Bae and Seung-Hyeub Oh
  232    
             
    Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure
Afnan K. Yousif
  239    
             
    A Reproducible High Etch Rate ICP Process for Etching of Via-Hole Grounds in 200㎛ Thick GaAs MMICs
D. S. Rawal, Vanita R. Agarwal, H. S. Sharma, B. K. Sehgal, and R. Muralidharan
  244    
             
    Simulation of 4H-SiC MESFET for High Power and High Frequency Response
S. N. Chattopadhyay, P. Pandey, C. B. Overton, S. Krishnamoorthy, and S.K. Leong
  251    
             
    Theoretical Study of Electron Mobility in Double-Gate Field Effect Transistors with Multilayer (strained-)Si/SiGe Channel
Jakub Walczak and Bogdan Majkusiak
  264    
 
 
               
     
A Publication of the Institute of Electronics Engineers of Korea
       
     
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