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Volume 8, Number 1, December 2008 (ISSN 1598-1657) |
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SPECIAL ISSUE ON NON-VOLATILE MEMORIES BEYOND TERA-BIT |
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Editorial Jea-Gun Park |
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Overview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory
Suyoun Lee, Jeung-hyun Jeong, and Byung-ki Cheong |
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Two-Bit/Cell NFGM Devices for High-Density NOR Flash Memory
Jong-Ho Lee |
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11 |
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Nano-Floating Gate Memory Devices with Metal-Oxide Nanoparticles in Polyimide Dielectrics
Eun Kyu Kim, Dong Uk Lee, Seon Pil Kim, Tae Hee Lee, Hyun-Mo Koo,
Jin-Wook Shin, Won-Ju Cho, and Young-Ho Kim |
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21 |
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Nonvolatile Memory Characteristics of Double-Stacked Si Nanocluster Floating Gate Transistor
Eunkyeom Kim, Kyongmin Kim, Daeho Son, Jeongho Kim, Kyungsu Lee, Sunghwan Won,
Junghyun Sok, Wan-Shick Hong, and Kyoungwan Park |
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27 |
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Tunnel Barrier Engineering for Non-Volatile Memory
Jongwan Jung and Won-Ju Cho |
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32 |
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Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 Plasma Oxidation
Sung-Ho Seo, Woo-Sik Nam, and Jea-Gun Park |
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40 |
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Effect of Physicochemical Properties of Solvents on Microstructure of Conducting Polymer Film for Non-Volatile Polymer Memory
Ungyu Paik, Sangkyu Lee, and Jea-Gun Park |
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46 |
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Recent Development in Polymer Ferroelectric Field Effect Transistor Memory
Youn Jung Park, Hee June Jeong, Jiyoun Chang, Seok Ju Kang, and Cheolmin Park |
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51 |
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A Materials Approach to Resistive Switching
Memory Oxides
M. Hasan, R. Dong, D. S. Lee, D. J. Seong, H. J. Choi, M.B. Pyun, and H. Hwang |
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66 |
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Resistive Switching Characteristics of TiO2 Films with Embedded Co Ultra Thin Layer
Young Ho Do, June Sik Kwak, and Jin Pyo Hong |
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A Novel Boost PFC Converter Employing ZVS Based Compound Active Clamping Technique with EMI Filter
P. Ram Mohan, M. Vijaya Kumar, and O.V. Raghava Reddy |
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A New Scaling Theory for the Effective Conducting Path Effect of Dual Material Surrounding Gate Nanoscale MOSFETs
N. B. Balamurugan, K. Sankaranarayanan, and M. Suguna |
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92 |
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A Nonvolatile Refresh Scheme Adopted 1T-FeRAM for Alternative 1T-DRAM
Hee-Bok Kang,, Bok-Gil Choi, and Man Young Sung |
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98 |
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A New Semi-Empirical Model for the Backgating Effect on the Depletion Width Modulation in GaAs MESFET’s
Neti V.L. Narasimha Murty and S. Jit |
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104 |
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Call Papers onSeptember 2008 Special Issue on Circuits for Wireless and Wireline Communication |
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110 |
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A Publication of the Institute of Electronics Engineers of Korea |
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