Volume 6, Number 3, Sep. 2006 (ISSN 1598-1657)
     
     
       
               
 
 
      Editorial ··········································································································································· Jae-Eung Oh   i    
 
 
     
      Optical Properties of a ZnO-MgZnO Quantum-Well ·························································································
·················································································································· Doyeol Ahn and Seoung-Hwan Park
  125    
      Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates ·················································
························································································································ Jae-Eung Oh and Mun Deok Kim
  131    
      Manufacturing of GaAs MMICs for Wireless Communications Applications ·············································
··················································· Wu-Jing Ho, Joe Liu, Hengchang Chou, Chan Shin Wu, Tsung Chi Tsai,
······························································································ Wei Der Chang, Frank Chou, and Yu-Chi Wang
  136    
      Beyond-CMOS: Impact of Side-Recess Spacing on the Logic Performance of 50 nm In0.7Ga0.3As HEMTs ······································································································································································
···················································· Dae-Hyun Kim, Jesus A. del Alamo, Jae-Hak Lee, and Kwang-Seok Seo
  146    
      High-Speed Digital/Analog NDR ICs Based on InP RTD/HBT Technology ················································
·································· Cheol Ho Kim, Yongsik Jeong, Taeho Kim, Sunkyu Choi, and Kyounghoon Yang
  154    
      InGaAs Nano-HEMT Devices for Millimeter-wave MMICs ············································································
····················································· Sung-Won Kim, Dae-Hyun Kim, Seong-Jin Yeon, and Kwang-Seok Seo
  162    
      Vertical Integration of MM-wave MMIC’s and MEMS Antennas ································································
······················································· Youngwoo Kwon, Yong-Kweon Kim, Sanghyo Lee, and Jung-Mu Kim
  169    
      Wide Band-gap FETs for High Power Amplifiers ······························································································
·······················································································································  Jinwook Burm and Jaekwon Kim
  175    
      A Fast and Robust Approach for Modeling of Nanoscale Compound Semiconductors for High Speed Digital Applications ················································································································································
··························································································· Anil Ahlawat, Manoj Pandey, and Sujata Pandey
  182    
      Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications ······················································································
······················································ Ritesh Gupta, Sandeep Kr Aggarwal, Mridula Gupta, and R. S. Gupta
  189    
               
      Growth and Characteristics of Near-UV LED Structures on Wet-etched Patterned Sapphire Substrate
······································································································· Hung-Seob Cheong and Chang-Hee Hong
  199    
 
 
    Analytical Thermal Noise Model of Deep-submicron MOSFETs ···································································
···················································································  Hyungcheol Shin, Seyoung Kim, and Jongwook Jeon
  206    
      Static I-V Characteristics of Optically Controlled GaAs MESFET’s with Emphasis on Substrate-induced Effects ························································································································································
················································································································· Neti V.L. Narasimha Murty and S. Jit
  210    
 
 
    Call Papers On March 2007 Special Issue on Analog Circuits for Nanometer CMOS   225    
         
     
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