Volume 6, Number 3, Sep. 2006 (ISSN 1598-1657)
Editorial
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Jae-Eung Oh
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Optical Properties of a ZnO-MgZnO Quantum-Well ·························································································
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Doyeol Ahn and Seoung-Hwan Park
125
Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates ·················································
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Jae-Eung Oh and Mun Deok Kim
131
Manufacturing of GaAs MMICs for Wireless Communications Applications ·············································
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Wu-Jing Ho, Joe Liu, Hengchang Chou, Chan Shin Wu, Tsung Chi Tsai,
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Wei Der Chang, Frank Chou, and Yu-Chi Wang
136
Beyond-CMOS: Impact of Side-Recess Spacing on the Logic Performance of 50 nm In0.7Ga0.3As HEMTs ······································································································································································
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Dae-Hyun Kim, Jesus A. del Alamo, Jae-Hak Lee, and Kwang-Seok Seo
146
High-Speed Digital/Analog NDR ICs Based on InP RTD/HBT Technology ················································
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Cheol Ho Kim, Yongsik Jeong, Taeho Kim, Sunkyu Choi, and Kyounghoon Yang
154
InGaAs Nano-HEMT Devices for Millimeter-wave MMICs ············································································
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Sung-Won Kim, Dae-Hyun Kim, Seong-Jin Yeon, and Kwang-Seok Seo
162
Vertical Integration of MM-wave MMIC’s and MEMS Antennas ································································
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Youngwoo Kwon, Yong-Kweon Kim, Sanghyo Lee, and Jung-Mu Kim
169
Wide Band-gap FETs for High Power Amplifiers ······························································································
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Jinwook Burm and Jaekwon Kim
175
A Fast and Robust Approach for Modeling of Nanoscale Compound Semiconductors for High Speed Digital Applications ················································································································································
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Anil Ahlawat, Manoj Pandey, and Sujata Pandey
182
Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications ······················································································
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Ritesh Gupta, Sandeep Kr Aggarwal, Mridula Gupta, and R. S. Gupta
189
Growth and Characteristics of Near-UV LED Structures on Wet-etched Patterned Sapphire Substrate
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Hung-Seob Cheong and Chang-Hee Hong
199
Analytical Thermal Noise Model of Deep-submicron MOSFETs ···································································
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Hyungcheol Shin, Seyoung Kim, and Jongwook Jeon
206
Static I-V Characteristics of Optically Controlled GaAs MESFET’s with Emphasis on Substrate-induced Effects ························································································································································
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Neti V.L. Narasimha Murty and S. Jit
210
Call Papers On March 2007 Special Issue on Analog Circuits for Nanometer CMOS
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A Publication of the Institute of Electronics Engineers of Korea
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