Volume 5, Number 2, June 2005 (ISSN 1598-1657)  

SPECIAL ISSUE ON THE 2005 KOREAN CONFERENCE ON SEMICONDUCTOR
Editorial ··················································································································································· Sung-Wook Park
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Editorial Board ····································································································································································
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Characteristics of Schottky Diode and Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors·················
·························································································Moongyu Jang, Yarkyeon Kim, Myungsim Jun and Seongjae Lee
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Enhanced Hole Injections in Organic Light Emitting Diode using Rhodium Oxide Coated Anode········································
···················································Soo Young Kim, Ho Won Choi, Kwang Young Kim, Yoon-Heung Tak and Jong-Lam Lee
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Characterizations of Interface-state Density between Top Silicon and Buried Oxide on Nano-SOI Substrate by using Pseudo-MOSFETs··············································································································································Won-Ju Cho
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ViP: A Practical Approach to Platform-based System Modeling Methodology····································································
···················································································Junhyung Um, Sungpack Hong, Young-Taek Kim, Eui-young Chung,
·········································································································Kyu-Myung Choi, Jeong-Taek Kong and Soo-Kwan Eo
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A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well······································
··················································································································Sang-Wook Han, Seong-Jin Kim and Euisik Yoon
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Device Characteristics of AlGaN/GaN MIS-HFET using Al2O3 Based High-k Dielectric····················································
······································································Ki-Yeol Park, Hyun-Ick Cho, Eun-Jin Lee, Sung-Ho Hahm and Jung-Hee Lee
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  4H-SiC Planar MESFET for Microwave Power Device Applications····················································································
·····················································································Hoon Joo Na, Sang Yong Jung, Jeong Hyun Moon, Jeong Hyuk Yim,
·················································································································Ho Keun Song, Jae Bin Lee and Hyeong Joon Kim
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  Theoretical Calculation and Experimental Verification of the Hf/Al Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition····································································································································
···································································································Deok-Sin Kil, Seung-Jin Yeom, Kwon Hong, Jae-Sung Roh,
······································································································Hyun-Cheol Sohn, Jin-Woong Kim and Sung-Wook Park
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  Green and Blue Light Emitting InN/GaN Quantum Wells with Nanosize Structures Grown by Metalorganic Chemical Vapor Deposition···················································································································Je Won Kim and Kyu Han Lee
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Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs··············································································
·······················································································Hyuck Soo Yang, Sang Youn Han, M. Hlad, B. P. Gila, K. H. Baik,
··············································································································S. J. Pearton, Soohwan Jang, B. S. Kang and F. Ren
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A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs··············································
····································································································································Muhammad Nawaz and Mikael Otling
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Call Papers on September 2005 Special Issue on Semiconductor Devices
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A Publication of the Institute of Electronics Engineers of Korea
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