Volume 2, Number 3, September 2002(ISSN 1598-1657)  

  JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

SPECIAL ISSUE ON MEMORY DEVICES

Editorial······························································Byoung Gon Yu and In Kyeong Yoo

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Aspects of Hard Breakdown Characteristics in a 2.2-nm-thick SiO₂ film  ·········································································· Kenji Komiya and Yasuhisa Omura
 

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Field Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory ····················································· Shuwei Li,Kazuto Koike, and Mitsuaki Yano
 

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A Novel Sensing Circuit for 2T-2MTJ MRAM Applicable to High Speed Synchronous Operation ·············································· Eun-Jung Jang, Jung-Hwa Lee, Seungjun Lee ,and Ji-hyun Kim
 

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Ta/TaN_x Metal Gate Electrodes for Advanced CMOS Devices············S. J. Lee and D. L. Kwong
 

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MRAM Technology for High Density Memory Application ····································································
···············Chang-Shuk Kim, In-Woo Jang, Kye-Nam Lee, Seaung-Suk Lee, Sung-Hyung Park, Gun-Sook Park, Geun Do Ban, and Young-Jin Park
 

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Technology of MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell········································· Wanjun Park, I-Hun Song, Sangjin Park , and Teawan Kim
 

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Metal-Organic Chemical Vapor Deposition of Pb(Zr_xTi_1-x)O₃ Thin Films for High-Density Ferroelectric Random Access Memory Application·············································· June Key Lee, June-Mo Ku, Chung-Rae Cho, Yong Kyun Lee, Sangmin Shin, and Youngsoo Park
 

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Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device ······························Byoung?Gon Yu, In-Kyu You, Won-Jae Lee, Sang-Ouk Ryu, Kwi-Dong Kim, Sung-Min Yoon, Seong-Mok Cho, Nam-Yeal Lee, and Woong-Chul Shin
 

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Virtual ground monitoring for high fault coverage of linear analog circuits················· Jeongjin Roh

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 Announce-

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 ments

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