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	Volume 1, Number 1, March 2001(ISSN 1598-1657)

	JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

	SPECIAL ISSUE ON THE 2001 KOERAN CONFERENCE ON SEMICONDUCTORS

	Fabrication Process
	Current Status and prospects of FET-type Ferroelectric Memories ....................................... ..............................................................................................................Hiroshi Ishiwara	1
	A Technique for Analyzing LSI Failures Using Wafer-level Emission Analysis System ............ .........................................Yasuhisa Higuchi,Yasumasa Kawaguchi, and Tatsumi Sakazume	15

	Devices
	A SDR/DDR 4Gb DRAM with 0.11㎛ DRAM Technology ....................................................... ......................................................................................................................Kinam Kim	20
	W Polymetal Gate Technology for Giga Bit DRAM ............................................................... ........................................................Jong Wan Jung, Sang Beom Han, and Kyungho Lee	31
	Characteristics of Si Nano-Crystal Memory ...................................................................... ........................................................Kwangseok Han, Ilgweon Kim, and Hyungcheol Shin	40

	Circuits
	High-Speed Signaling in SDRAM Bus Interface Channels : Review ...................................... .................................Hong June Park, young Soo Sohn, Jin Seok Park, and Seung Jun Bae	50

	MEMS
	RF MEMS Devices for Wireless Applications ..................................................................... ........................................................................Jae y. Park, Jong U. Bu, and Joong W. Lee	70
	Electromagnetic Micro x-y Stage for Probe-Based Data Storage ......................................... .........................................Jae-joon Choi, Hongsik Park, Kyu Yong Kim, and Jong Up Jeon	84




	Copyright ⓒ 2001 Institute of Electronics Engineers of Korea All rights reserved.